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| Datasheet File OCR Text: |
| NTE476 Silicon NPN Transistor RF Power Output Description: The NTE476 is a silicon epitaxial NPN-planar transistor which employs a multi-emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters result in high RF current handling capability, high power gain, low base resistance and low output capacitance. This device is intended for use as a Class A, B or C amplifier and in oscillator and frequency multiplier circuits. Features: D Designed for VHF mobile and marine transmitters D High efficiency at maximum stability D Improved metallization to achieve extreme ruggedness Absolute Maximum Ratings: (TA = +25C except where specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, ICmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Dissipation at 25C Stud, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23.2W Thermal Resistance, Junction-to-Stud, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.54C/W Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Dynamic Characteristics Current Gain - Bandwidth Product Output Capacitance Functional Tests Power Output Power Gain (Class C) Collector Efficiency (Class C) POUT Pg VCE = 13.6V, f = 175MHz 12 4.77 80 - - - - - - W dB % fT Cob IC = 100mA, VCE = 13.6V VCB = 13.6V, IE = 0, f = 100kHz - - 350 - - 45 MHz pF V(BR)CEO IC = 200mA, IB = 0, Note 1 V(BR)CBO IC = 500A, IE = 0 V(BR)EBO IE = 2mA, IC = 0 ICBO VCB = 15V, IE = 0 18 36 4 - - - - - - - - 0.25 V V V mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulsed thru a 25mH inductor. Collector .200 (5.08) Dia Emitter/Stud .430 (10.92) Base .340 (8.63) Dia .038 (0.98) Dia .480 (12.19) Max .320 (8.22) Max .113 (2.88) 10-32 NF-2A .078 (1.97) Max .455 (11.58) Max |
Price & Availability of NTE476
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